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2SA1847-L-AZ PDF预览

2SA1847-L-AZ

更新时间: 2024-02-24 15:19:59
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管
页数 文件大小 规格书
6页 144K
描述
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

2SA1847-L-AZ 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

2SA1847-L-AZ 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SA1847  
PNP SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-SPEED SWITCHING  
The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat).  
This transistor is ideal for use as a driver in DC/DC converters and actuators.  
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus  
contributing to mounting cost reduction.  
FEATURES  
• Auto-mount possible in radial taping specifications  
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions  
• High hFE and low VCE(sat):  
VCE(sat) = 0.3 V MAX. @IC = 6.0 V, IB = 0.3 A  
hFE 100  
@VCE = 2.0 V, IC = 2.0 A  
• Fast switching speed  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)  
IB(DC)  
PT  
Conditions  
Ratings  
150  
100  
7.0  
Unit  
V
V
V
10  
A
PW 300 µs, duty cycle 2%  
Ta = 25°C  
20  
A
6.0  
A
Total power dissipation  
Junction temperature  
Storage temperature  
1.8  
W
°C  
°C  
Tj  
150  
55 to +150  
Tstg  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D15593EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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