Datasheet > 2SA1836M4

2SA1836M4

更新时间： 2024-11-15 23:19:59

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
4页	40K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416

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中文翻译

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2SA1836M4 数据手册

DATA SHEET

PNP SILICON EPITAXIAL TRANSISTOR

2SA1836

PNP SILICON EPITAXIAL TRANSISTOR

DESCRIPTION

The 2SA1836 is PNP silicon epitaxial transistor.

PACKAGE DRAWING (Unit: mm)

+0.1

–0.05

0.1

0.3 ± 0.05

FEATURES

• High DC current gain: h^FE2= 200 TYP.

• High voltage: V^CEO= −50 V

0 to 0.1

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Collector to Base Voltage

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

P^T

−60

−50

+0.1

0.2

–0

Collector to Emitter Voltage

Emitter to Base Voltage

0.6

0.5

0.75 ± 0.05

−5.0

−100

−200

200

1.0

1.6 ± 0.1

Collector Current (DC)

°C

Collector Current (pulse) ^Note1

Total Power Dissipation (T^A= 25°C) ^Note2

Junction Temperature

1: Emitter

2: Base

3: Collector

T^j

150

Storage Temperature Range

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

T^stg

–55 to + 150 °C

2. When mounted on ceramic substrate of 3.0 cm²x 0.64 mm

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

CHARACTERISTICS

Collector Cut-off Current

SYMBOL

I^CBO

TEST CONDITIONS

V^CB= −60 V, I^E= 0

MIN. TYP. MAX. UNIT

−100

−

Emitter Cut-off Current

I^EBO

V^EB= −5.0 V, I^C= 0

Note

DC Current Gain

h^FE1

V^CE= −6.0 V, I^C= −0.1 mA

V^CE= −6.0 V, I^C= −1.0 mA

I^C= −100 mA, I^B= −10 mA

V^CE= −6.0 V, I^E= 10 mA

V^CE= −6.0 V, I^E= 0, f = 1.0 MHz

h^FE2

200

600

−

Note

Base to Emitter Voltage

V^BE

−0.62

Note

Collector Saturation Voltage

V^CE(sat)

V^BE(sat)

f^T

−0.18 −0.3

−0.86 −1.0

180

Note

Base Saturation Voltage

Gain Bandwidth Product

Output Capacitance

MHz

C^ob

4.5

6.0

Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%

h^FECLASSFICATION

Marking

h^FE2

300 to 600

90 to 180

135 to 270

200 to 400

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published July 2001 NS CP(K)

Printed in Japan

D15615EJ1V0DS00 (1st edition)

2001

12 3 4

中文翻译

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与2SA1836M4相关器件

型号	品牌	获取价格	描述	数据表
2SA1836-M4	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SA1836-M4-A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1836M5	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
2SA1836-M5-A	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SA1836M6	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
2SA1836-M6-A	RENESAS	获取价格	100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1836M6-T1-AT	RENESAS	获取价格	TRANSISTOR,BJT,PNP,50V V(BR)CEO,100MA I(C),SOT-416
2SA1836M7	NEC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
2SA1836-M7	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SA1836-M7-A	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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