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2SA1837F PDF预览

2SA1837F

更新时间: 2024-10-31 14:53:23
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
5页 257K
描述
功率三极管

2SA1837F 数据手册

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2SA1837F-HAF  
PNP Silicon Epitaxial Planar Power Transistor  
Features  
• High Current-Gain Bandwidth Product  
• Halogen and Antimony Free(HAF), RoHS compliant  
TO-220F Plastic Package  
1.Base 2.Collector 3.Emitter  
Applications  
• Power amplifier applications.  
• Driver stage amplifier applications  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
-VCBO  
-VCEO  
-VEBO  
-IC  
Value  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
230  
230  
V
5
V
Collector Current  
1
A
Base Current-Continuous  
-IB  
0.1  
A
Power Dissipation  
Ta = 25  
TC = 25℃  
Ptot  
2
17  
W
W
Power Dissipation  
Ptot  
Junction Temperature  
Storage Temperature Range  
Tj  
150  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
62.5  
7.35  
Unit  
/W  
/W  
Thermal Resistance from Junction to Ambient  
Thermal Resistance from Junction to Case  
RθJC  
®
Dated : 25/03/2022 Rev: 01  
1 / 5  

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