Datasheet > 2SA1797-B-TN3-R

2SA1797-B-TN3-R

更新时间： 2024-01-15 20:37:58

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	163K
描述
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin, TO-252, 3 PIN

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2SA1797-B-TN3-R 数据手册

2SA1797

PNP SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

V_CBO

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

V_CEO

-50

V_EBO

-6

-2

Collector Current

I_C

PULSE(Note 1)

TO-92NL

SOT-223

SOT-89

-5

0.8

°C

Collector Power Dissipation

P_C

0.5

TO-252

1.9

Junction Temperature

T_J

150

Storage Temperature

T_STG

-55 ~ +150

Note: 1. Single pulse, P_W=10ms

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

BV_CBOI_C= -50μA

BV_CEOI_C= -1mA

BV_EBOI_E= -50μA

-50

-6

I_CBO

I_EBO

V_CB= -50V

V_EB= -5V

-0.1

μA

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Gain

V_CE(SAT)I_C/I_B= -1A/-50mA (Note)

-0.15 -0.35

400

h_FE

f_T

V_CE= -2V, I_C=-0.5A (Note)

V_CE= -2V, I_E=0.5A, f=100MHz

V_CB= -10V, I_E=0A, f=1MHz

120

Transition Frequency

200

MHz

Output Capacitance

Cob

Note: Measured using pulse current.

CLASSIFICATION OF h_FE

RANK

RANGE

120-240

200-400

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R208-029,E

www.unisonic.com.tw

123 4

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