Datasheet > 2SA1732S(TP-FA)

2SA1732S(TP-FA)

更新时间： 2024-01-27 10:52:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	40K
描述
TRANSISTOR,BJT,PNP,40V V(BR)CEO,8A I(C),TO-252VAR

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技术参数
数据手册

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2SA1732S(TP-FA) 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	8 A
配置：	Single	最小直流电流增益 (hFE)：	140
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	15 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SA1732S(TP-FA) 数据手册

Ordering number:ENN3136

PNP Epitaxial Planar Silicon Transistor

2SA1732

High-Speed Switching Applications

Features

Package Dimensions

unit:mm

· Adoption of FBET processes.

· Large current capacity.

2045B

· Low collector-to-emitter saturation voltage.

· High-speed switching.

[2SA1732]

6.5

2.3

5.0

0.5

0.85

0.7

1.2

0.6

0.5

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

2.3

unit:mm

2044B

[2SA1732]

6.5

2.3

5.0

0.5

0.85

0.6

1.2

0 to 0.2

1 : Base

2 : Collector

3 : Emitter

2.3

4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

40804TN (PC)/83098HA (KT)/6299MO, TS No.3136–1/4

12 3 4

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