2SA1714L

更新时间： 2024-02-20 07:41:44

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管
页数	文件大小	规格书
6页	142K
描述
PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

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中文翻译

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技术参数
数据手册

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2SA1714L 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	3 A	配置：	DARLINGTON
最小直流电流增益 (hFE)：	2000	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	12 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SA1714L 数据手册

DATA SHEET

SILICON TRANSISTOR

2SA1714

PNP SILICON EPITAXIAL POWER TRANSISTOR

(DARLINGTON CONNECTION)

FOR HIGH-SPEED SWITCHING

PACKAGE DRAWING (UNIT: mm)

The 2SA1714 is a high-speed darlington power transistor. This

transistor is ideal for high-precision control such as PWM control for

pulse mortors or blushless mortor of OA and FA equipment.

FEATURES

• High DC current amplifiers due to darlington connection

• Large current capacitance and low V^CE(sat)

• TO-126 power transistor with high power dissipation

• Complementary transistor with 2SC4342

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to know

the specification of quality grade on the devices and its

recommended applications.

Electrode Connection

1. Emitter

2. Collector

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

3. Base

4. Fin (collector)

Parameter

Symbol

V^CBO

Ratings

−100

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Base current (DC)

−100

V^CEO

−8.0

V^EBO

–

3.0

I^C(DC)

–

6.0

I^C(pulse)*

I^B(DC)

−0.3

1.3

P^T(Ta = 25°C)

P^T(Tc = 25°C)

T^j

Total power dissipation

Junction temperature

Storage temperature

°C

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16124EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

12 3 4 5 6

中文翻译

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与2SA1714L相关器件

型号	品牌	获取价格	描述	数据表
2SA1714-L	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
2SA1714M	NEC	获取价格	PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
2SA1714-M	RENESAS	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, TO-126
2SA1714-M-AZ	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
2SA1715	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 200MA I(C) \| TO-92
2SA1718	JMNIC	获取价格	Silicon PNP Power Transistors
2SA1718	ISC	获取价格	Silicon PNP Power Transistors
2SA1718	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SA1718K	ISC	获取价格	Transistor
2SA1718L	ISC	获取价格	Transistor

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