Datasheet > 2SA1718

2SA1718

更新时间： 2024-09-27 06:16:19

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	48K
描述
Silicon PNP Power Transistors

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中文翻译

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数据手册

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2SA1718 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SA1718

DESCRIPTION

·With TO-220F package

·High DC current gain.

·Low collector saturation voltage.

·DARLINGTON

APPLICATIONS

·Ideal for motor drviers and solenoid

drivers application

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-100

-7

UNIT

Open base

Open collector

-5

I_CM

Collector current-peak

Base current

-10

I_B

-0.5

T_C=25℃

T_a=25℃

P_C

Collector dissipation

2.0

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3

中文翻译

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