Ordering number : EN3094A
2SA1708 / 2SC4488
SANYO Sem iconductors
DATA S HEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1708 / 2SC4488
High-Voltage Switching Applications
Features
•
Adoption of FBET, MBIT processes.
• High breakdown voltage, large current capacity.
• Fast switching speed.
Specifications ( ) : 2SA1708
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
(--)120
(--)100
(--)6
(--)1
(--)2
1
CBO
CEO
EBO
V
V
I
I
A
C
Collector Current (Pulse)
Collector Dissipation
A
CP
P
W
°C
°C
C
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Collector Cutoff Current
Symbol
Conditions
=(--)100V, I =0A
Unit
min
max
I
I
V
V
V
V
V
(--)100
(--)100
400*
nA
nA
CBO
CB
EB
CE
CE
CB
E
Emitter Cutoff Current
DC Current Gain
=(--)4V, I =0A
C
EBO
h
=(--)5V, I =(--)100mA
100*
FE
C
Gain-Bandwidth Product
Output Capacitance
f
=(--)10V, I =(--)100mA
C
120
MHz
pF
T
Cob
=(--)10V, f=1MHz
(13)8.5
Continued on next page.
* : The 2SA1708 / 2SC4488 are classified by 100mA h as follws:
FE
Rank
R
S
T
h
FE
100 to 200
140 to 280
200 to 400
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
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22509EA MS IM TC-00001859 / 93003TN (KT)/83098HA(KT)/4249MO, TS No.3094-1/5