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2SA1618-GR(TE85L,F) PDF预览

2SA1618-GR(TE85L,F)

更新时间: 2024-09-27 21:15:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 202K
描述
TRANSISTOR,BJT,ARRAY,COMM EMITTER,PNP,50V V(BR)CEO,150MA I(C),TSOP

2SA1618-GR(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.61最大集电极电流 (IC):0.15 A
最小直流电流增益 (hFE):200最高工作温度:125 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SA1618-GR(TE85L,F) 数据手册

 浏览型号2SA1618-GR(TE85L,F)的Datasheet PDF文件第2页浏览型号2SA1618-GR(TE85L,F)的Datasheet PDF文件第3页浏览型号2SA1618-GR(TE85L,F)的Datasheet PDF文件第4页 
2SA1618  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1618  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
Small package (dual type)  
High voltage and high current: V  
= 50 V, I = 150 mA (max)  
CEO  
C
High h  
h
= 120~400  
linearity: h  
FE: FE  
Excellent h  
(I = 0.1 mA)/ h  
C
(I = 2 mA)  
FE  
FE  
FE  
C
= 0.95 (typ.)  
Complementary to 2SC4207  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
JEDEC  
JEITA  
I
150  
30  
mA  
mA  
C
Base current  
I
B
TOSHIBA  
2-3L1A  
P
C
Collector power dissipation  
300  
mW  
(Note 1)  
Weight: 0.014 g (typ.)  
Junction temperature  
T
125  
°C  
°C  
j
Storage temperature range  
T
stg  
55~125  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Marking  
Equivalent Circuit (top view)  
1
2007-11-01  

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