Datasheet > 2SA1611

2SA1611

更新时间： 2024-09-25 07:07:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
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描述
TRANSISTOR(PNP)

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中文翻译

获取价格

数据手册

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2SA1611 数据手册

2SA1611

TRANSISTOR(PNP)

FEATURES

SOT–323

 High DC Current Gain

 High Voltage

 Complementary to 2SC4177

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

1. BASE

Collector-Base Voltage

-60

2. EMITTER

3. COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-5

Collector Current

-100

150

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

P_C

R_ΘJA

T_j

833

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-60

-50

-5

Typ

Max

Unit

V_(BR)CBOI_C=-100µA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-100µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

h_FE*

V_CE(sat)

V_BE

V_CB=-60V, I_E=0

V_EB=-5V, I_C=0

-100

600

Emitter cut-off current

V_CE=-6V, I_C=-1mA

I_C=-100mA, I_B=-10mA

V_CE=-6V, I_C=-1mA

V_CE=-6V,I_c=-10mA

DC current gain

-0.3

Collector-emitter saturation voltage

Collector-emitter voltage

Transition frequency

-0.58

-0.68

f_T

180

4.5

MHz

Collector output capacitance

C_ob

V_CB=-10V, I_E=0, f=1MHz

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

CLASSIFICATION OF h_FE

RANK

RANGE

90–180

135–270

200–400

300–600

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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