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2SA1588-Y PDF预览

2SA1588-Y

更新时间： 2024-11-18 15:31:31
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
3页 204K
描述
TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal

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中文翻译

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2SA1588-Y 技术参数

生命周期：Active零件包装代码：SC-70
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.45
最大集电极电流 (IC)：0.5 A集电极-发射极最大电压：30 V
配置：SINGLE最小直流电流增益 (hFE)：120
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：PNP功耗环境最大值：0.1 W
最大功率耗散 (Abs)：0.1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz
VCEsat-Max：0.25 VBase Number Matches：1

2SA1588-Y 数据手册

 浏览型号2SA1588-Y的Datasheet PDF文件第2页浏览型号2SA1588-Y的Datasheet PDF文件第3页 
2SA1588  
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)  
2SA1588  
Audio Frequency Low Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
Switching Applications  
•
•
Excellent h  
linearity:  
h
at V  
= 25 (min)  
FE (2)  
FE  
= −6 V, I = −400 mA  
C
CE  
Complementary to 2SC4118  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−35  
−30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
−5  
V
I
−500  
−50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
T
j
125  
T
stg  
−55 to 125  
JEDEC  
JEITA  
―
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
SC-70  
2-2E1A  
TOSHIBA  
Weight: 0.006 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Collector cut-off current  
Emitter cut-off current  
Symbol  
Test Condition  
= −35 V, I = 0  
Min  
⎯
⎯
70  
25  
⎯
⎯
⎯
⎯
Typ.  
⎯
Max  
−0.1  
−0.1  
400  
⎯
Unit  
μA  
I
V
V
V
V
CBO  
CB  
EB  
CE  
CE  
E
I
= −5 V, I = 0  
⎯
μA  
EBO  
C
h
h
= −1 V, I = −100 mA  
⎯
FE (1)  
FE (2)  
C
DC current gain  
(Note)  
= −6 V, I = −400 mA  
⎯
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −100 mA, I = −10 mA  
−0.1  
−0.8  
200  
13  
−0.25  
−1.0  
⎯
V
V
CE (sat)  
C
B
V
V
V
V
= −1 V, I = −100 mA  
C
BE  
CE  
CE  
CB  
Transition frequency  
f
= −6 V, I = −20 mA  
MHz  
pF  
T
C
Collector output capacitance  
C
= −6 V, I = 0, f = 1 MHz  
⎯
ob  
E
Note: h  
h
classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400  
classification O: 25 (min), Y: 40 (min), GR: 75 (min)  
(
) Marking Symbol  
FE (1)  
FE (2)  
Marking  
Start of commercial production  
1987-01  
1
2014-03-01  
123

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