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2SA1588-Y(T5LHND,F PDF预览

2SA1588-Y(T5LHND,F

更新时间: 2024-11-18 15:31:31
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
3页 204K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

2SA1588-Y(T5LHND,F 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.71
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SA1588-Y(T5LHND,F 数据手册

 浏览型号2SA1588-Y(T5LHND,F的Datasheet PDF文件第2页浏览型号2SA1588-Y(T5LHND,F的Datasheet PDF文件第3页 
2SA1588  
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)  
2SA1588  
Audio Frequency Low Power Amplifier Applications  
Unit: mm  
Driver Stage Amplifier Applications  
Switching Applications  
Excellent h  
linearity:  
h
at V  
= 25 (min)  
FE (2)  
FE  
= 6 V, I = 400 mA  
C
CE  
Complementary to 2SC4118  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
35  
30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
I
500  
50  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
T
j
125  
T
stg  
55 to 125  
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
SC-70  
2-2E1A  
TOSHIBA  
Weight: 0.006 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Collector cut-off current  
Emitter cut-off current  
Symbol  
Test Condition  
= −35 V, I = 0  
Min  
70  
25  
Typ.  
Max  
0.1  
0.1  
400  
Unit  
μA  
I
V
V
V
V
CBO  
CB  
EB  
CE  
CE  
E
I
= −5 V, I = 0  
μA  
EBO  
C
h
h
= −1 V, I = −100 mA  
FE (1)  
FE (2)  
C
DC current gain  
(Note)  
= −6 V, I = −400 mA  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −100 mA, I = −10 mA  
0.1  
0.8  
200  
13  
0.25  
1.0  
V
V
CE (sat)  
C
B
V
V
V
V
= −1 V, I = −100 mA  
C
BE  
CE  
CE  
CB  
Transition frequency  
f
= −6 V, I = −20 mA  
MHz  
pF  
T
C
Collector output capacitance  
C
= −6 V, I = 0, f = 1 MHz  
ob  
E
Note: h  
h
classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400  
classification O: 25 (min), Y: 40 (min), GR: 75 (min)  
(
) Marking Symbol  
FE (1)  
FE (2)  
Marking  
Start of commercial production  
1987-01  
1
2014-03-01  

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