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2SA1587-GR(T5LMATF PDF预览

2SA1587-GR(T5LMATF

更新时间： 2024-11-21 08:28:51
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 331K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon

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2SA1587-GR(T5LMATF 数据手册

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2SA1587  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1587  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
•
•
High voltage: V  
= −120 V  
CEO  
Excellent h  
linearity: h  
(I = −0.1 mA)/h  
(I = −2 mA)  
C
FE  
FE  
C
FE  
= 0.95 (typ.)  
= 200 to 700  
•
•
•
•
High h  
h
FE: FE  
Low noise: NF = 1dB (typ.), 10dB (max)  
Complementary to 2SC4117  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−120  
−120  
−5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
−100  
−20  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
C
T
j
125  
JEDEC  
JEITA  
―
T
stg  
−55 to 125  
SC-70  
2-2E1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
TOSHIBA  
Weight: 0.006 g (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −120 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
⎯
⎯
⎯
⎯
−0.1  
−0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= −5 V, I = 0  
C
EBO  
h
FE  
(Note)  
DC current gain  
V
= −6 V, I = −2 mA  
200  
⎯
700  
CE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −10 mA, I = −1 mA  
⎯
⎯
⎯
⎯
100  
4
−0.3  
⎯
V
CE (sat)  
C
B
f
V
V
V
= −6 V, I = −1 mA  
MHz  
pF  
T
CE  
CB  
CE  
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
⎯
ob  
E
= −6 V, I = −0.1 mA, f = 1 kHz,  
C
Noise figure  
NF  
⎯
1.0  
10  
dB  
Rg = 10 kΩ  
Note: h classification GR (G): 200 to 400, BL (L): 350 to 700  
(
) marking symbol  
FE  
Marking  
Start of commercial production  
1987-01  
1
2014-03-01  
1234

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