Datasheet > 2SA1464

2SA1464

更新时间： 2024-11-27 06:22:35

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
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描述
PNP Silicon Epitaxia

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中文翻译

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数据手册

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2SA1464 数据手册

SMD Type

TransistIoCrs

PNP Silicon Epitaxia

2SA1464

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High fT: fT=400MHz.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-60

Unit

Collector-emitter voltage

Emitter-base voltage

-40

-5

Collector current

-500

Maximum Total power dissipation

at 25 ambient temperature

Maximum Junction temperature

Maximum Storage temperature

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

I^EBO

Testconditons

VCB = -40V, IE=0

Min

Typ

Max

Unit

-100

300

VEB = -4V, IC=0

V^CE= -2V , IC = -150mA

V^CE= -2V , IC = -500mA

140

DC current gain *

h^FE

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Gain bandwidth product

Output capacitance

V^CE(sat)IC = -500mA , IB = -50mA

V^BE(sat)IC = -500mA , IB = -50mA

-0.45 -0.75

-1

400

-1.3

f^T

C^ob

t^on

VCE = -10V , IE = 20mA

150

MHz

VCB = -10V , IE = 0 , f = 1.0MHz

VCC = -30V ,

Turn-on time

Storage time

t^stg

t^off

IC = 150mA ,

225

255

Turn-off time

IB1 = -IB2 = 15mA

*. PW 350ìs,duty cycle 2%

hFE Classification

Marking

hFE

Y12

Y13

Y14

75 150

100 200

150 300

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