Datasheet > 2SA1464-R

2SA1464-R

更新时间： 2024-11-25 01:11:15

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	627K
描述
PNP Silicon Epitaxial Transistors

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中文翻译

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2SA1464-R 数据手册

M C C

2SA1464-P

2SA1464-Q

2SA1464-R

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

PNP Silicon

Epitaxial Transistors

High fT: fT=400MHZ

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Halogen free available upon request by adding suffix "-HF"

SOT-23

Maximum Ratings @ T_a= 25?(unless otherwise noted)

Symbol

I_C

Parameter

Value

-0.5

Unit

Collector Current

P_D

Collector Power Dissipation

Junction Temperature

0.2

T_J

150

T_STG

Storage Temperature Range

-55 to +150

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

OFF CHARACTERISTICS

Parameter

Min TYPE Max

Units

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

VCEO

-40

-60

-5.0

VCBO

DIMENSIONS

INCHES

MIN

VEBO

I_CBO

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.104

.055

.041

.081

.024

.0039

.044

.007

.020

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

Collector-Base Cutoff Current

(V_CB=-40Vdc, I_E=0)

Emitter-Base Cutoff Current

(V_EB=-4.0Vdc, I_C=0)

- 100 nAdc

I_EBO

- 100 nAdc

ON CHARACTERISTICS

DC Current Gain (IC=-150mAdc, VCE=-2.0Vdc) 75

140

300

(IC=-500mAdc, VCE=-2.0Vdc)

Collector-Emitter Saturation Voltage *

(I_C=-500mAdc, I_B=-50mAdc)

Base-Emitter Saturation Voltage *

(I_C=-500mAdc, I_B=-50mAdc)

Gain bandwidth product

.085

.37

V_CE(sat)

-0.45 -0.75

Vdc

Suggested Solder

Pad Layout

V_BE(sat)

-1

400

-1.3

ꢀ_ꢀ

150

MHZ

.031

.800

(VCE=-10Vdc,IE=20mAdc)

C_ob

(VCB=-10Vdc,IE=0,f=1MHZ)

.035

.900

225

255

VCC=-30V ,

Ton

Turn-on time

Storage time

Turn-off time

.079

inches

IC=150mA ,

IB1=-IB2 =15mA

Tstg

Toff

2.000

.037

.950

.037

.950

CLASSIFICATION OF hFE

Rank

Range

75-150

Y12

100-200

Y13

150-300

Marking

Y14

www.mccsemi.com

Revision: B

2013/01/01

1 of 4

12 3 4

中文翻译

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与2SA1464-R相关器件

型号	品牌	获取价格	描述	数据表
2SA1464-T1BY13	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
2SA1464-T1BY14	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
2SA1464-T2B	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
2SA1464-T2B-AT	RENESAS	获取价格	TRANSISTOR,BJT,PNP,40V V(BR)CEO,500MA I(C),SOT-23VAR
2SA1464-T2BY12	NEC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
2SA1464-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
2SA1464Y12	RENESAS	获取价格	500mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA1464-Y12	KEXIN	获取价格	PNP Transistors
2SA1464Y12-A	RENESAS	获取价格	500mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, MINIMOLD, SC-59, 3 PIN
2SA1464-Y12-HF	KEXIN	获取价格	PNP Transistors

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