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2SA1451A-YF PDF预览

2SA1451A-YF

更新时间: 2024-11-13 11:52:27
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
5页 149K
描述
High-Speed, High-Current Switching Applications

2SA1451A-YF 数据手册

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2SA1451A  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA1451A  
High-Speed, High-Current Switching Applications  
Unit: mm  
Low collector saturation voltage  
: V  
= 0.4 V (max) (I = 6 A)  
CE (sat)  
C
High-speed switching: t  
= 1.0 μs (typ.)  
stg  
Complementary to 2SC3709A  
Absolute Maximum Ratings (Tc = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
50  
6  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
I
12  
2  
C
Base current  
I
B
Collector power dissipation  
(Tc = 25°C)  
JEDEC  
P
30  
W
C
JEITA  
Junction temperature  
Storage temperature range  
T
150  
°C  
°C  
j
TOSHIBA  
2-10R1A  
T
stg  
55 to 150  
Weight: 1.7 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-09  

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