生命周期: | Transferred | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.46 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 250 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1189RR | RENESAS |
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100mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | |
2SA1189TZ | HITACHI |
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100mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | |
2SA1190 | HITACHI |
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Silicon PNP Epitaxial | |
2SA1190 | RENESAS |
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Silicon PNP Epitaxial | |
2SA1190 | NJSEMI |
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New Jersey Semi-Conductor Products, | |
2SA1190D | HITACHI |
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Small Signal Bipolar Transistor, 0.1A I(C), PNP, TO-92 | |
2SA1190-D | HITACHI |
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SMALL SIGNAL TRANSISTOR, TO-92 | |
2SA1190-D | RENESAS |
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暂无描述 | |
2SA1190D-E | RENESAS |
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暂无描述 | |
2SA1190DRF | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, |