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2SA1091_07 PDF预览

2SA1091_07

更新时间： 2024-11-09 04:25:47
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器显示器高压
页数 文件大小 规格书
4页 654K
描述
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

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2SA1091_07 数据手册

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2SA1091  
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)  
2SA1091  
High Voltage Control Applications  
Unit: mm  
Plasma Display, Nixie Tube Driver Applications  
Cathode Ray Tube Brightness Control Applications  
•
•
•
•
High voltage: V  
= −300 V, V  
= −300 V  
CBO  
CEO  
Low saturation voltage: V  
= −0.5 V (max)  
CE (sat)  
Small collector output capacitance: C = 6 pF (typ.)  
ob  
Complementary to 2SC2551.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−300  
−300  
−8  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
−100  
−20  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
400  
JEDEC  
JEITA  
TO-92  
C
T
j
150  
SC-43  
T
stg  
−55~150  
TOSHIBA  
2-5F1B  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.21 g (typ.)  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −300 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
⎯
⎯
⎯
⎯
−0.1  
−0.1  
⎯
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= −8 V, I = 0  
C
EBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
V
V
I
I
= −0.1 mA, I = 0  
−300  
−300  
(BR) CBO  
(BR) CEO  
C
C
E
= −1 mA, I = 0  
⎯
V
B
h
FE (1)  
(Note)  
V
V
= −10 V, I = −20 mA  
30  
⎯
150  
CE  
C
DC current gain  
h
= −10 V, I = −1 mA  
20  
⎯
⎯
40  
⎯
⎯
⎯
⎯
60  
6
⎯
−0.5  
−1.2  
⎯
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V
I
I
= −20 mA, I = −2 mA  
V
V
CE (sat)  
BE (sat)  
C
C
B
V
= −20 mA, I = −2 mA  
B
f
V
V
= −10 V, I = −20 mA  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= −20 V, I = 0, f = 1 MHz  
8
ob  
E
Note: h  
classification R: 30~90 O: 50~150  
FE (1)  
1
2007-11-01  
1234

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