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2SA1052MCTR-E PDF预览

2SA1052MCTR-E

更新时间: 2024-01-08 13:04:33
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 162K
描述
Silicon PNP Epitaxial

2SA1052MCTR-E 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.41最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):250JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):280 MHzBase Number Matches:1

2SA1052MCTR-E 数据手册

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