Datasheet > 2SA1012(TO-252)

2SA1012(TO-252)

更新时间： 2024-04-09 19:00:12

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	237K
描述
50V,5A,Medium Power PNP Bipolar Transistor

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2SA1012(TO-252) 数据手册

Product specification

PNP SILICON TRANSISTOR

2SA1012

ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX

UNIT

Collector-base breakdown voltage

V_CBO

I_C=-100uA,I_E=0

I_C=-10mA,I_B=0

I_E=-100uA,I_C=0

V_CB=-50V,I_E=0

V_EBO=-5V,I_C=0

V_CE=-1V,I_C=-1A

V_CE=-1V,I_C=-3A

-60

Collector-emitter breakdown voltage V_CEO

-50

-5

Emitter-base breakdown voltage

Collector cut-off current

V_EBO

I_CBO

I_EBO

h_FE1

h_FE2

-1.0

240

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C=-3A,I_B=-0.15A

-0.2

-0.9

-0.4

-1.2

V_CE=-3V,I_C=-0.15A

V_CE=-4V,I_C=-1A

MHz

Collector output capacitance

C_ob

V_CB=-10V,I_E=0,f=1MHz

170

CLASSIFICATION OF h_FE1

Rank

Range

70-140

120-240

STM0223A

www.gmesemi.com

123 4

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