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2N998 PDF预览

2N998

更新时间: 2024-10-31 21:53:47
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
1页 64K
描述
Small Signal NPN Transistors / Dual Transistors

2N998 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-72
包装说明:CYLINDRICAL, O-MBCY-W4针数:4
Reach Compliance Code:not_compliant风险等级:5.38
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):1600
JEDEC-95代码:TO-72JESD-30 代码:O-MBCY-W4
JESD-609代码:e0元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.8 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

2N998 数据手册

  
Small Signal NPN Transistors  
TO-72 Case  
TYPE NO.  
DESCRIPTION  
V
V
V
I
@ V  
CB  
h
@ I  
@ V  
CE  
V
(SAT) @ I  
f
C
ob  
CBO CEO EBO CBO  
FE  
C
CE  
C
T
(V)  
(V)  
(V)  
(µA)  
(V)  
(mA)  
(V)  
(V)  
(mA)  
(MHz) *C  
cb  
(pF)  
MIN  
30  
MIN  
15  
15  
15  
60  
15  
13  
15  
15  
12  
15  
MIN  
3.0  
3.0  
3.0  
15  
MAX  
0.001  
- -  
MIN MAX  
MAX  
0.5  
- -  
MIN  
500  
MAX  
1.7  
2N917  
RF/IF OSCILLATOR  
15  
- -  
20  
20  
20  
- -  
200  
- -  
3.0  
3.0  
3.0  
10  
1.0  
10  
3.0  
- -  
2N917A RF/IF OSCILLATOR  
30  
600  
1.7  
2N918  
2N998  
RF/IF OSCILLATOR  
DARLINGTON  
30  
0.01  
0.01  
0.01  
0.01  
0.02  
0.01  
0.02  
0.01  
15  
90  
15  
15  
1.0  
15  
15  
15  
1.0  
5.0  
1.0  
10  
0.4  
1.8  
- -  
10  
100  
- -  
600  
1.7  
100  
30  
1,600 8,000  
60  
30  
2N2857 VHF/UHF OSC  
2.5  
3.0  
2.0  
2.5  
2.5  
2.5  
30  
20  
25  
30  
25  
20  
150  
200  
150  
150  
250  
125  
3.0  
4.0  
2.0  
3.0  
3.0  
25  
1,000  
600  
1.0*  
2.5  
2N2865 RF/IF OSCILLATOR  
2N3478 VHF/UHF LOW NOISE  
2N3839 VHF/UHF AMPL/OSC  
2N5179 VHF/UHF AMPL/OSC  
25  
0.4  
- -  
10  
- -  
30  
8.0  
1.0  
1.0  
1.0  
750  
1.0*  
1.0*  
1.0*  
1.5*  
30  
- -  
- -  
1,000  
900  
20  
0.4  
- -  
10  
- -  
BFY90  
VHF/UHF AMPL/OSC  
30  
1,000  
Shaded areas indicate Darlington.  
Dual Transistors  
TO-71 Case  
P
@ T =25oC=360mW Total (Both Die Equal Power)  
D
A
TYPE NO.  
DESCRIPTION  
V
V
V
I
@
V
h
@ I @ V  
(mA) (V) (V)  
V
(SAT)  
@ I  
C
MATCHING  
CBO CEO EBO CBO  
CB  
FE  
C
CE CE  
(V)  
(V)  
(V)  
(nA)  
(V)  
(mA)  
h
V
FE  
BE  
MIN  
MIN  
MIN  
MAX  
MIN MAX  
MAX  
0.35  
0.25  
%
20  
20  
(mV)  
5.0  
CEN741 NPN LOW NOISE  
CEN832 PNP LOW NOISE  
45  
60  
45  
60  
6.0  
5.0  
10  
45  
50  
150  
150  
600  
450  
0.01  
1.0  
5.0  
5.0  
1.0  
1.0  
10  
5.0  
69  
www.centralsemi.com  

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