生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-MSFM-P3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
其他特性: | RADIATION HARDENED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 1.42 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AA | JESD-30 代码: | R-MSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 15 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N7290H3 | RENESAS | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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2N7290H4 | RENESAS | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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2N7290R | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-257AA |
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2N7290R1 | RENESAS | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Meta |
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2N7290R3 | RENESAS | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Meta |
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2N7290R4 | RENESAS | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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