是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, S-MSFM-P3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.92 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 5 A | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 0.715 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AA | JESD-30 代码: | S-MSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 50 W | 最大功率耗散 (Abs): | 50 W |
最大脉冲漏极电流 (IDM): | 15 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N727CSM | SEME-LAB | Bipolar PNP Device in a Hermetically sealed LCC1 |
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|
2N727DCSM | SEME-LAB | Dual Bipolar PNP Devices in a hermetically sealed |
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2N727LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, |
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2N728 | ETC | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18 |
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|
2N7280 | RENESAS | 3A, 500V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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2N7280D | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,3A I(D),TO-204AA |
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