是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 其他特性: | RADIATION HARDENED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 2.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 75 W | 最大脉冲漏极电流 (IDM): | 9 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7280R | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,3A I(D),TO-204AA | |
2N7280R1 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal | |
2N7280R3 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal | |
2N7280R4 | RENESAS |
获取价格 |
3A, 500V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
2N7281D | RENESAS |
获取价格 |
2A, 500V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
2N7281D1 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-205AF | |
2N7281D2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-205AF | |
2N7281D3 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),TO-205AF | |
2N7281H1 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2A I(D),TO-205AF | |
2N7281H2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-205AF |