是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.92 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 8 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 25 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7272R4 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-205AF | |
2N7273 | RENESAS |
获取价格 |
12A, 100V, 0.195ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | |
2N7273D | RENESAS |
获取价格 |
12A, 100V, 0.195ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | |
2N7273D1 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-257AA | |
2N7273D2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-257AA | |
2N7273D3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-257AA | |
2N7273H | RENESAS |
获取价格 |
12A, 100V, 0.195ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | |
2N7273H1 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-257AA | |
2N7273H2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-257AA | |
2N7273H3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-257AA |