Datasheet > 2N7228_10

2N7228_10

更新时间： 2022-09-16 16:12:05

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	166K
描述
N-CHANNEL MOSFET

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2N7228_10 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Gate Charge:

On-State Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q_g(on)

Q_gs

Q_gd

120

V_GS= 10V, I_D= 12A

_DS= 50V

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

Switching time tests:

Turn-on delay time

Rinse time

Turn-off delay time

Fall time

I_D= 12A, V_GS= 10Vdc,

Gate drive impedance =

7.5Ω,

t_d(on)

t_r

t_d(off)

t_f

190

170

130

_DD= 250Vdc

di/dt ≤ 100A/µs, V_DD

30V,

≤

Diode Reverse Recovery Time

t_rr

1600

I_F= 12A

T4-LDS-0051 Rev. 2 (101154)

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