Datasheet > 2N7002KW_10

2N7002KW_10

更新时间： 2022-09-16 16:06:41

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	157K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

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数据手册

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2N7002KW_10 数据手册

2N7002KW

DS=10V

Vgs

=250mA

Qsw

Vgs(th)

Qg(th)

0.2

0.4

0.6

0.8

Q_g- Gate Charge (nC)

Qgs

Qgd

Fig.6 - Gate Charge Waveform

Fig.7 - Gate Charge

1.2

I_D=250mA

ID = 250uA

1.1

0.9

0.8

0.7

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J- Junction Temperature (^oC)

Fig.8 - Threshold Voltage vs Temperature

Fig.9 - Breakdown Voltage vs Junction Temperature

GS=0V

25℃

0.1

TJ=125℃

-55℃

0.01

0.2

0.4

0.6

0.8

1.2

1.4

1.6

V_SD- Source-to-Drain Voltage (V)

Fig.10 - Source-Drain Diode Forward Voltage

May 21.2010-REV.01

PAGE . 4

1 2 345

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