Datasheet > 2N7002KW_10

2N7002KW_10

更新时间： 2022-09-16 16:06:41

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	157K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

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数据手册

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2N7002KW_10 数据手册

2N7002KW

Typical CChhaarraacctteerriissttiiccss CCuurrvveess ((TT_A==2255^OCC,,uunnlleessss ootthheerrwwiissee nnootteedd))

1.2

DS=10V

= 10V ~ 6.0V

V_G^G_S^S= 6.0~10V

5.0V

4.0V

0.8

0.6

0.4

0.2

0.8

0.6

0.4

0.2

4.0V

=25℃

3.0V

V_GS- Gate-to-Source Voltage (V)

V_DS- Drain-to-Source Voltage (V)

^{Fig. 1}F^-TI^YG^P.1^IC-^ALO^Fu^Otp^Ru^Wt^{ARD CHARACTERISTIC}

Characteristic

FIG.2- Transfer Characteristic

V_GS= 4.5V

I_D=500mA

I_D=200mA

ID=200mA

GS=10V

0.2

0.4

0.6

0.8

V_GS- Gate-to-Source Voltage (V)

I_D- Drain Current (A)

FIG.3- On Resistance vs Drain Current

FIG.4- On Resistance vs Gate to Source Voltage

1.8

V_GS=10V

I_D=500mA

1.6

1.4

1.2

0.8

0.6

-50 -25

75 100 125 150

T_J- Junction Temperature (^oC)

FIG.5- On Resistance vs Junction Temperature

May 21.2010-REV.01

PAGE . 3

1 234 5

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