Datasheet > 2N7002KW-TP-HF

2N7002KW-TP-HF

更新时间： 2024-02-06 19:12:23

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	487K
描述
Small Signal Field-Effect Transistor,

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技术参数
数据手册

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2N7002KW-TP-HF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2N7002KW-TP-HF 数据手册

M C C

2N7002KW

Micro Commercial Components

MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static Characteristics

Drain-Source Breakdown Voltage

Gate Threshold Voltage*

VDS

VGS(th)

IDSS

VGS = 0V, ID =250µA

VDS =VGS, ID =1mA

VDS =48V,VGS = 0V

VGS =±20V, VDS = 0V

VGS = 4.5V, ID =200mA

VGS =10V,ID =500mA

VGS=0V, IS=300mA

Zero Gate Voltage Drain Current

Gate –Source leakage current

µA

Ω

IGSS

±10

5.3

Drain-Source On-Resistance*

Diode Forward Voltage

Recovered charge

RDS(on)

VSD

Ω

1.5

V^GS=0V,IS=300mA,VR=25V,

dl^s/dt=-100A/µs

Q_r

Dynamic Characteristics**

Input Capacitance

Ciss

Coss

Crss

VDS =10V,VGS =0V,f =1MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics**

Turn-On Delay Time

t_d(on)

t_d(off)

V^GS=10V,VDD=50V,RG=50Ω,

R^GS=50Ω, RL=250Ω

Turn-Off Delay Time

V^GS=0V,IS=300mA,VR=25V,

dl^s/dt=-100A/µs

Reverse recovery Time

t_rr

GATE-SOURCE ZENER DIODE

Gate-Source Breakdown Voltage

BVGSO

Igs=±1mA (Open Drain)

±21.5

±30

Notes:

*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.

**These parameters have no way to verify.

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