Datasheet > 2N7002K_12

2N7002K_12

更新时间： 2022-05-17 13:16:14

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	228K
描述
N-Channel Enhancement Mode Field Effect Transistor

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2N7002K_12 数据手册

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

3.0

2.0

V_GS= 3V

V_GS= 10V

2.5

4.5V

1.5

2.0

1.5

1.0

0.5

1.0

0.5

10V

0.8

0.0

0.2

0.4

0.6

1.0

I_D. DRAIN-SOURCE CURRENT(A)

V_DS. DRAIN-SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature

Figure 4. On-Resistance Variation with

Gate-Source Voltage

3.0

V_DS= 10V

I_D= 500 mA

2.5

2.0

1.5

1.0

0.5

-50

100

150

T_J. JUNCTION TEMPERATURE(^oC)

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation with

Temperature

1.0

2.0

V_DS= 10V

25(^oC)

V_DS= V_GS

0.8

1.8

T_J= -25(^oC)

I_D= 1 mA

150(^oC)

0.6

1.6

I_D= 0.25 mA

125(^oC)

75(^oC)

1.4

1.2

1.0

0.4

0.2

0.0

-50

100

150

T_J. JUNCTION TEMPERATURE(^oC)

V_GS. GATE-SOURCE VOLTAGE (V)

2N7002K Rev. A3

www.fairchildsemi.com

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