2N7002K-AU
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
0.120(3.04)
0.110(2.80)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
0.056(1.40)
0.047(1.20)
0.008(0.20)
0.003(0.08)
0.079(2.00)
0.070(1.80)
• Acqire quality system certificate : TS16949
• AEC-Q101qualified
0.004(0.10)
0.000(0.00)
0.044(1.10)
0.035(0.90)
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.020(0.50)
0.013(0.35)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals: Solderable per MIL-STD-750,Method 2026
• Marking: K72
• Approx. Weight: 0.0003 ounce, 0.0084 gram
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
D rain-Source Voltage
Symbol
VDS
Limit
60
Units
V
Gate-Source Voltage
VGS
ID
+20
300
V
C ontinuous Drain Current
mA
mA
1)
Pulsed Drain Current
IDM
2000
TA=25OC
TA=75OC
350
210
Maximum Power Dissipation
PD
mW
Operating Junction and Storage Temperature
TJ,TSTG
RθJA
-55 to + 150
357
OC
Range
Junction-to Ambient Thermal Resistance(PCB mounted)2
OC/W
Note:1.Maximum DC current limited by the package
2.Surface mounted on FR4 board, t<10 sec
3.Pulse width<300us, Duty cycle<2%
May 13,2015-REV.03
PAGE . 1