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2N7002K215

更新时间： 2022-05-20 00:49:21

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2N7002K215 数据手册

2N7002K

TrenchMOS™ logic level FET

Rev. 01 — 20 October 2003

Product data

M3D088

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

■ Logic level compatible

■ Very fast switching

■ Subminiature surface mount package ■ Gate-source ESD protection diodes.

1.3 Applications

■ Relay driver

■ High speed line driver.

1.4 Quick reference data

■ V_DS≤ 60 V

■ I_D≤ 340 mA

■ P_tot≤ 0.83 W

■ R_DSon≤ 3.9 Ω.

2. Pinning information

Table 1:

Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

Top view

MSB003

03ab60

SOT23

12 3 4 5 6 7...12

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2N7002K-7	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002KA	NXP	N-channel TrenchMOS FET	获取价格
2N7002KA	KEC	N Channel MOSFET	获取价格
2N7002KA	MCC	Tape: 3K/Reel, 120K/Ctn.;	获取价格
2N7002KA_1	NXP	N-channel TrenchMOS FET	获取价格
2N7002KA_2	NXP	N-channel TrenchMOS FET	获取价格