Datasheet > 2N7002K215

2N7002K215

更新时间： 2022-05-20 00:49:21

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	249K
描述
TrenchMOSâ¢ logic level FET

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2N7002K215 数据手册

2N7002K

TrenchMOS™ logic level FET

Philips Semiconductors

5. Thermal characteristics

Table 4:

Symbol Parameter

R_th(j-sp)thermal resistance from junction to solder point Figure 4

Thermal characteristics

Conditions

Min

Typ

Max Unit

150

K/W

R_th(j-a)

thermal resistance from junction to ambient

minimum footprint;

350

mounted on a printed-circuit board

5.1 Transient thermal impedance

03aa39

th(j-sp)

(K/W)

= 0.5

0.2

0.1

0.05

δ =

0.02

single pulse

-5

-4

-3

-2

-1

(s)

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

9397 750 11703

Product data

Rev. 01 — 20 October 2003

4 of 12

1 2 345 6 7...12

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