Datasheet > 2N7002K215

2N7002K215

更新时间： 2022-05-20 00:49:21

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	249K
描述
TrenchMOSâ¢ logic level FET

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数据手册

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2N7002K215 数据手册

2N7002K

TrenchMOS™ logic level FET

Philips Semiconductors

03an70

03an72

0.5

6 V

= 10V

(A)

0.4

(A)

> I x R

D DSon

T = 25 C

0.4

4.5 V

4 V

0.3

0.2

0.1

0.3

0.2

0.1

150 C

T = 25 C

3.5 V

3 V

0.5

1.5

(V)

T_j= 25 °C

T_j= 25 °C and 150 °C; V_DS> I_Dx R_DSon

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

03an71

03aa28

2.4

= 3.5 V

T = 25 C

DSon

(

)

Ω

4 V

1.8

4.5 V

1.2

0.6

6 V

10 V

0.1

0.2

0.3

0.4

0.5

-60

120

180

(A)

T (°C)

T_j= 25 °C

R_DSon

a =

----------------------------

R_{DSon(25 C)}

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 11703

Product data

Rev. 01 — 20 October 2003

6 of 12

1...3 4 567 8 9...12

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