Datasheet > 2N7002K215

2N7002K215

更新时间： 2022-05-20 00:49:21

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	249K
描述
TrenchMOSâ¢ logic level FET

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数据手册

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2N7002K215 数据手册

2N7002K

TrenchMOS™ logic level FET

Philips Semiconductors

03aa25

03aa17

120

der

(%)

der

(%)

100

150

200

( C)

100

150

200

(°C)

P_tot

I_D

P_der

× 100%

I_der

× 100%

-----------------------

-------------------

tot(25 C)

D(25 C)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03an66

Limit R

= V / I

DSon

= 10 s

(A)

100

-1

1 ms

10 ms

100 ms

-2

(V)

T_sp= 25 °C; I_DMis single pulse; V_GS= 10 V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 11703

Product data

Rev. 01 — 20 October 2003

3 of 12

1 234 5 6 7...12

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