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2N7002K-13 PDF预览

2N7002K-13

更新时间: 2024-01-31 01:58:17
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
6页 239K
描述
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

2N7002K-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.38 A
最大漏极电流 (ID):0.3 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.54 W子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002K-13 数据手册

 浏览型号2N7002K-13的Datasheet PDF文件第2页浏览型号2N7002K-13的Datasheet PDF文件第3页浏览型号2N7002K-13的Datasheet PDF文件第4页浏览型号2N7002K-13的Datasheet PDF文件第5页浏览型号2N7002K-13的Datasheet PDF文件第6页 
2N7002K  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
I
D max  
Low On-Resistance  
V(BR)DSS  
RDS(ON) max  
TA = +25°C  
380mA  
Low Input Capacitance  
2@ VGS = 10V  
3@ VGS = 5V  
Fast Switching Speed  
60V  
310mA  
Low Input/Output Leakage  
ESD Protected Up To 2kV  
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description  
This MOSFET has been designed to minimize the on-state resistance  
(RDS(on)) and yet maintain superior switching performance, making it  
ideal for high efficiency power management applications.  
Mechanical Data  
Case: SOT23  
Applications  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish Matte Tin annealed over Alloy 42  
Motor Control  
Power Management Functions  
Backlighting  
e3  
leadframe. Solderable per MIL-STD-202, Method 208  
Weight: 0.008 grams (approximate)  
Drain  
SOT23  
D
Gate  
S
G
Gate  
Protection  
ESD protected up to 2kV  
Source  
Diode  
Top View  
Top View  
Equivalent Circuit  
Ordering Information (Note 4)  
Part Number  
2N7002K-7  
2N7002KQ-7  
2N7002K-13  
2N7002KQ-13  
Compliance  
Standard  
Automotive  
Standard  
Case  
Packaging  
SOT23  
SOT23  
SOT23  
SOT23  
3000/Tape & Reel  
3000/Tape & Reel  
10000/Tape & Reel  
10000/Tape & Reel  
Automotive  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html  
Marking Information  
K7K = Product Type Marking Code  
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)  
K7K  
K7K  
= Date Code Marking for CAT (Chengdu Assembly/ Test site)  
YM  
Y or = Year (ex: A = 2013)  
Y
M = Month (ex: 9 = September)  
Chengdu A/T Site  
Shanghai A/T Site  
Date Code Key  
Year  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
2013  
2014  
2015  
2016  
2017  
Code  
T
U
V
W
X
Y
Z
A
B
C
D
E
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
www.diodes.com  
August 2013  
© Diodes Incorporated  
2N7002K  
Document number: DS30896 Rev. 14 - 2  

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