Datasheet > 2N7002K_12

2N7002K_12

更新时间： 2022-09-16 16:01:18

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	160K
描述
300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET

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2N7002K_12 数据手册

2N7002ZW

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_a= 25°C)

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

Continuous

300

Drain Current

I_D

Pulse(Note 2)

800

Power Dissipation

Derating above T_A=25°C

200

mW/°C

°C

P_D

1.6

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

T_STG

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_a=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS

BV_DSS

I_DSS

V_GS=0V, I_D=10µA

V_DS=60V, V_GS=0V

V_DS=0V, V_GS=±20V

µA

1.0

I_GSS

±10

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

_DS=10V, I_D=1mA

1.0

1.85

2.5

13.5

7.5

V_GS=10V, I_D=0.5A, T_J=125°C

V_GS=5V, I_D=0.05A

Static Drain-Source On-Resistance (Note)

Ω

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

Output Capacitance

V_DS=25V, V_GS=0V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Turn-ON Delay Time

3.0

5.0

t_D(ON)

I_D=0.2 A, V_DD=30V, V_GS=10V,

R_L=150Ω, R_G=10Ω

Turn-OFF Delay Time

t_D(OFF)

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

Maximum Pulsed Drain-Source Diode

Forward Current

V_SD

V_GS=0V, Is=115mA (Note )

0.88

1.5

0.8

I_SM

Maximum Continuous Drain-Source Diode

Forward Current

115

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

2. Pulse width≦300μs, Duty cycle≦1%

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R502-539.a

www.unisonic.com.tw

123

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