2N7000TA

更新时间： 2024-02-17 09:04:14

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	86K
描述
Advanced Small Signal MOSFET

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数据手册

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2N7000TA 数据手册

N-CHANNEL

2N7000BU/2N7000TA

Small Signal MOSFET

Electrical Characteristics (T_C=25℃ unless otherwise specified)

Symbol

Characteristic

Min. Typ. Max. Units

Test Condition

_GS=0V,I_D=250μA

_DS= V_GS,I_D=250μA

_DS= V_GS,I_D=1mA

_GS=15V

BV_DSS

Drain-Source Breakdown Voltage

0.3

0.4

3.9

2.2

100

V_GS(th)

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

I_GSS

_GS=-15V

-- -100

-- 1000

V_DS=60V

_DS=45V,T_C=125℃

I_DSS

Drain-to-Source Leakage Current

Static Drain-Source

μA

V_GS=10V,I_D=0.5A

V_DS=15V,I_D=0.5A

R_DS(on)

5.0

Ω

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

②

g_fs

C_iss

C_oss

C_rss

t_d(on)

t_r

0.1

0.3

3.0

V_GS=0V,V_DS=25V,

f =1MHz

V_DD=30V,I_D=0.5A,

t_d(off)

t_f

R_G=15Ω

②③

Turn-Off Delay Time

Fall Time

Notes ;

① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%

③ Essentially Independent of Operating Temperature

123

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