5秒后页面跳转
2N7000_D74Z PDF预览

2N7000_D74Z

更新时间: 2024-02-05 10:33:34
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
7页 87K
描述
N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/AMMO

2N7000_D74Z 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:11 weeks风险等级:0.52
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.2 A最大漏极电流 (ID):0.2 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7000_D74Z 数据手册

 浏览型号2N7000_D74Z的Datasheet PDF文件第1页浏览型号2N7000_D74Z的Datasheet PDF文件第2页浏览型号2N7000_D74Z的Datasheet PDF文件第3页浏览型号2N7000_D74Z的Datasheet PDF文件第5页浏览型号2N7000_D74Z的Datasheet PDF文件第6页浏览型号2N7000_D74Z的Datasheet PDF文件第7页 
Typical Electrical Characteristics  
2N7000 / 2N7002 / NDS7002A  
2
1.5  
1
3
2.5  
2
VGS = 10V  
VGS =4.0V  
9.0  
8.0  
4.5  
5.0  
7.0  
6.0  
6.0  
7.0  
8.0  
5.0  
1.5  
1
9.0  
10  
0.5  
0
4.0  
3.0  
0.5  
0
1
2
3
4
5
0
0.4  
0.8  
1.2  
1.6  
2
V
, DRAIN-SOURCE VOLTAGE (V)  
I
, DRAIN CURRENT (A)  
DS  
D
Figure 1. On-Region Characteristics  
Figure 2. On-Resistance Variation with Gate  
Voltage and Drain Current  
2
3
VGS = 10V  
V GS = 10V  
1.75  
1.5  
2.5  
2
ID = 500mA  
T
= 125°C  
J
1.25  
1
1.5  
1
25°C  
-55°C  
0.75  
0.5  
0
0.5  
-50  
-25  
0
T
25  
50  
75  
100  
125  
150  
0
0.4  
0.8  
1.2  
1.6  
2
, JUNCTION TEMPERATURE (°C)  
J
I
D
, DRAIN CURRENT (A)  
Figure 3. On-Resistance Variation  
with Temperature  
Figure 4. On-Resistance Variation with Drain  
Current and Temperature  
2
1.6  
1.2  
0.8  
0.4  
0
1.1  
T
= -55°C  
J
VDS = 10V  
25°C  
V DS = VGS  
I D = 1 mA  
125°C  
1.05  
1
0.95  
0.9  
0.85  
0.8  
-50  
-25  
0
T
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
, JUNCTION TEM PERATURE (°C)  
V
, GATE TO SOURCE VOLTAGE (V)  
J
GS  
Figure 5. Transfer Characteristics  
Figure 6. Gate Threshold Variation with  
Temperature  
2N7000.SAM Rev. A1  

与2N7000_D74Z相关器件

型号 品牌 描述 获取价格 数据表
2N7000A KEC FIELD EFFECT TRANSISTOR

获取价格

2N7000-A DIODES 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

获取价格

2N7000AMO NXP TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SPT, TO-92 V

获取价格

2N7000-AP MCC Small Signal Field-Effect Transistor,

获取价格

2N7000-AP-HF MCC Small Signal Field-Effect Transistor,

获取价格

2N7000B DIODES Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal

获取价格