Datasheet > 2N65ZL

2N65ZL

更新时间： 2022-02-26 11:10:56

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	232K
描述
2A, 650V N-CHANNEL POWER MOSFET

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2N65ZL 数据手册

2N65ZL

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

650

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Avalanche Current (Note 2)

2.0

Continuous

I_D

2.0

Drain Current

Pulsed (Note 2)

I_DM

8.0

Single Pulsed (Note 3)

Repetitive (Note 2)

E_AS

140

V/ns

Avalanche Energy

E_AR

4.5

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation

dv/dt

P_D

4.5

Junction Temperature

T_J

+150

-55 ~ +150

°С

Operating Temperature

Storage Temperature

T_OPR

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L=64mH, I_AS=2.0A, V_DD=50V, R_G=25 Ω, Starting T_J= 25°C

4. I_SD≤2.4A, di/dt≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

110

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_Jc

4.53

UNISONIC TECHNOLOGIES CO., LTD

2 of 6

QW-R502-931, A

www.unisonic.com.tw

123 4 5 6

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