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2N6530 PDF预览

2N6530

更新时间: 2024-11-30 06:26:43
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 99K
描述
Silicon NPN Power Transistors

2N6530 数据手册

 浏览型号2N6530的Datasheet PDF文件第2页浏览型号2N6530的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6530  
DESCRIPTION  
·With TO-220 package  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·Power switching  
·Hammer drivers  
·Series and shunt regulators  
·Audio amplifiers  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
80  
UNIT  
V
Open base  
80  
V
Open collector  
5
V
8
A
ICM  
Collector current-Peak  
Base current  
15  
A
IB  
0.25  
65  
A
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
W
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Thermal resistance junction to case  
1.92  
/W  
R
θ
JC  

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