2N6395-BD

更新时间： 2024-11-04 13:04:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		栅极触发装置可控硅整流器
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6页	115K
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2N6395-BD 数据手册

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by 2N6394/D

SEMICONDUCTOR TECHNICAL DATA

Reverse Blocking Triode Thyristors

Motorola preferred devices

. . . designed primarily for half-wave ac control applications, such as motor controls,

heating controls and power supplies.

SCRs

•

Glass Passivated Junctions with Center Gate Geometry for Greater Parameter

Uniformity and Stability

Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High

Heat Dissipation and Durability

12 AMPERES RMS

50 thru 800 VOLTS

Blocking Voltage to 800 Volts

CASE 221A-07

(TO-220AB)

STYLE 3

*MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

, V

Value

Unit

(1)

Peak Repetitive Forward and Reverse Blocking Voltage

Volts

DRM RRM

(Gate Open, T = –40 to 125°C)

2N6394

2N6395

2N6397

2N6398

2N6399

100

400

600

800

RMS On–State Current (T = 90°C) (All Conduction Angles)

Amps

T(RMS)

Peak Non-Repetitive Surge Current

100

TSM

(1/2 Cycle, Sine Wave, 60 Hz, T = 125°C)

Circuit Fusing (t = 8.3 ms)

Forward Peak Power

I t

0.5

A s

Watts

Watt

Amps

°C

Forward Average Gate Power

Forward Peak Gate Current

Operating Junction Temperature Range

Storage Temperature Range

THERMAL CHARACTERISTICS

G(AV)

–40 to +125

–40 to +150

°C

stg

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

*Indicates JEDEC Registered Data.

°C/W

θJC

1. V

and V

for alltypes canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate

RRM

DRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Thyristor Device Data

Motorola, Inc. 1999

12 3 4 5 6

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