Datasheet > 2N6106

2N6106

更新时间： 2024-11-25 06:26:27

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	94K
描述
Silicon PNP Power Transistors

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2N6106 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6106 2N6108 2N6110

DESCRIPTION

·With TO-220 package

·With short pin

APPLICATIONS

·Power amplifier and switching

circuits applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

-40

UNIT

2N6106

2N6108

2N6110

2N6106

2N6108

2N6110

V_CBO

Collector-base voltage

Open emitter

Open base

-60

-80

-30

V_CEO

Collector-emitter voltage

-50

-70

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-5

ꢀ

-7

Collector current-peak

Base current

-10

-3

P_T

T_j

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-65~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance from junction to case

MAX

UNIT

R_{th j-c}

3.125

ꢀ/W

12 3

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