5秒后页面跳转
2N60L-TM3-T PDF预览

2N60L-TM3-T

更新时间: 2024-09-26 03:56:19
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
8页 143K
描述
2 Amps, 600 Volts N-CHANNEL MOSFET

2N60L-TM3-T 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.56雪崩能效等级(Eas):140 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):2 A最大漏极电流 (ID):2 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):13 pFJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):44 W
最大脉冲漏极电流 (IDM):8 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):180 ns
最大开启时间(吨):115 nsBase Number Matches:1

2N60L-TM3-T 数据手册

 浏览型号2N60L-TM3-T的Datasheet PDF文件第2页浏览型号2N60L-TM3-T的Datasheet PDF文件第3页浏览型号2N60L-TM3-T的Datasheet PDF文件第4页浏览型号2N60L-TM3-T的Datasheet PDF文件第5页浏览型号2N60L-TM3-T的Datasheet PDF文件第6页浏览型号2N60L-TM3-T的Datasheet PDF文件第7页 
UNISONIC TECHNOLOGIES CO., LTD  
2N60  
Power MOSFET  
2 Amps, 600 Volts  
N-CHANNEL MOSFET  
1
TO- 251  
TO-252  
1
DESCRIPTION  
The UTC 2N60 is a high voltage MOSFET and is designed to  
have better characteristics, such as fast switching time, low gate  
charge, low on-state resistance and have a high rugged  
avalanche characteristics. This power MOSFET is usually used at  
high speed switching applications in power supplies, PWM motor  
controls, high efficient DC to DC converters and bridge circuits.  
1
TO-220  
FEATURES  
1
TO-220F  
* RDS(ON) = 3.8@VGS = 10V.  
* Ultra Low gate charge (typical 9.0nC)  
* Low reverse transfer capacitance (Crss = typical 5.0 pF)  
* Fast switching capability  
*Pb-free plating product number: 2N60L  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
SYMBOL  
2.Drain  
1.Gate  
3.Source  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1
2
D
D
D
D
D
3
S
S
S
S
S
2N60-TA3-T  
2N60-TF3-T  
2N60-TM3-T  
2N60-TN3-R  
2N60-TN3-T  
2N60L-TA3-T  
2N60L-TF3-T  
2N60L-TM3-T  
2N60L-TN3-R  
2N60L-TN3-T  
TO-220  
TO-220F  
TO-251  
TO-252  
TO-252  
G
G
G
G
G
Tube  
Tube  
Tube  
Tape Reel  
Tube  
Note: Pin Assignment: G: Gate D: Drain S: Source  
2N60L-TA3-T  
(1) T: Tube, R: Tape Reel  
(1)Packing Type  
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,  
TN 3: TO-252  
(2)Package Type  
(3)Lead Plating  
(3) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
1 of 8  
Copyright © 2005 Unisonic Technologies Co., Ltd  
QW-R502-053,E  

2N60L-TM3-T 替代型号

型号 品牌 替代类型 描述 数据表
2N60L-TA3-T UTC

类似代替

2 Amps, 600 Volts N-CHANNEL MOSFET
AOU2N60 AOS

功能相似

600V, 2A N-Channel MOSFET

与2N60L-TM3-T相关器件

型号 品牌 获取价格 描述 数据表
2N60L-TMA-T UTC

获取价格

2A, 600V N-CHANNEL POWER MOSFET
2N60L-TMS2-T UTC

获取价格

Power Field-Effect Transistor
2N60L-TMS4-T UTC

获取价格

Power Field-Effect Transistor
2N60L-TMS-T UTC

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2N60L-TN3-R UTC

获取价格

2 Amps, 600 Volts N-CHANNEL MOSFET
2N60L-TN3-T UTC

获取价格

2 Amps, 600 Volts N-CHANNEL MOSFET
2N60L-TND-R UTC

获取价格

Power Field-Effect Transistor
2N60L-X-T2Q-T UTC

获取价格

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
2N60L-X-T60-K UTC

获取价格

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
2N60L-X-TA3-T UTC

获取价格

2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET