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2N5486ZL1 PDF预览

2N5486ZL1

更新时间: 2024-01-08 07:14:15
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
5页 250K
描述
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN

2N5486ZL1 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknown风险等级:5.56
其他特性:EUROPEAN PART NUMBER配置:SINGLE
最大漏极电流 (ID):0.03 AFET 技术:JUNCTION
最大反馈电容 (Crss):1 pF最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
最小功率增益 (Gp):10 dB认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N5486ZL1 数据手册

 浏览型号2N5486ZL1的Datasheet PDF文件第2页浏览型号2N5486ZL1的Datasheet PDF文件第3页浏览型号2N5486ZL1的Datasheet PDF文件第4页浏览型号2N5486ZL1的Datasheet PDF文件第5页 
ON Semiconductort  
1 DRAIN  
JFET VHF/UHF Amplifiers  
N–Channel — Depletion  
2N5486  
3
GATE  
2 SOURCE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
25  
Unit  
Vdc  
Drain–Gate Voltage  
Reverse Gate–Source Voltage  
Drain Current  
V
DG  
V
GSR  
25  
Vdc  
I
D
30  
mAdc  
mAdc  
1
Forward Gate Current  
I
10  
G(f)  
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
C
CASE 29–11, STYLE 5  
TO–92 (TO–226AA)  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Gate–Source Breakdown Voltage  
(I = –1.0 µAdc, V = 0)  
V
–25  
Vdc  
(BR)GSS  
G
DS  
Gate Reverse Current  
(V = –20 Vdc, V = 0)  
I
GSS  
–1.0  
–0.2  
nAdc  
µAdc  
GS  
DS  
(V = –20 Vdc, V = 0, T = 100°C)  
GS  
DS  
A
Gate Source Cutoff Voltage  
(V = 15 Vdc, I = 10 nAdc)  
V
Vdc  
GS(off)  
–2.0  
8.0  
–6.0  
20  
DS  
D
ON CHARACTERISTICS  
Zero–Gate–Voltage Drain Current  
I
mAdc  
DSS  
(V = 15 Vdc, V = 0)  
DS  
GS  
SMALL–SIGNAL CHARACTERISTICS  
Forward Transfer Admittance  
y
mmhos  
mmhos  
mmhos  
mmhos  
mmhos  
fs  
(V = 15 Vdc, V = 0, f = 1.0 kHz)  
4000  
8000  
1000  
75  
DS  
GS  
Input Admittance  
Re(y )  
is  
(V = 15 Vdc, V = 0, f = 400 MHz)  
DS  
GS  
Output Admittance  
y
os  
(V = 15 Vdc, V = 0, f = 1.0 kHz)  
DS  
GS  
Output Conductance  
(V = 15 Vdc, V = 0, f = 400 MHz)  
Re(y )  
os  
100  
DS  
GS  
Forward Transconductance  
(V = 15 Vdc, V = 0, f = 400 MHz)  
Re(y )  
fs  
3500  
DS  
GS  
Semiconductor Components Industries, LLC, 2001  
76  
Publication Order Number:  
May, 2001 – Rev. 0  
2N5486/D  

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