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2N5494

更新时间: 2024-02-27 07:45:58
品牌 Logo 应用领域
锦美电子 - JMNIC 晶体晶体管
页数 文件大小 规格书
3页 47K
描述
Silicon NPN Power Transistors

2N5494 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliant风险等级:5.83
最大集电极电流 (IC):7 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):0.8 MHz

2N5494 数据手册

 浏览型号2N5494的Datasheet PDF文件第2页浏览型号2N5494的Datasheet PDF文件第3页 
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496  
DESCRIPTION  
··With TO-220 package  
·High power dissipation  
APPLICATIONS  
·For used in medium power and  
amplifier applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N5490/5494  
2N5492  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
75  
2N5496  
90  
2N5490/5494  
2N5492  
40  
VCEO  
Collector-emitter voltage  
Open base  
V
55  
2N5496  
70  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
7
3
IB  
Base current  
A
PT  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance from junction to case  
MAX  
UNIT  
Rth j-c  
2.5  
/W  
JMnic  

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