是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | FET 技术: | JUNCTION |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.35 W | 子类别: | Other Transistors |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5484-TR6-E3 | VISHAY |
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Transistor | |
2N5484TRB | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484TRE | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484TRF | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5484TRH | CENTRAL |
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RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C | |
2N5485 | INTERSIL |
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N-CHANNEL JFET | |
2N5485 | FAIRCHILD |
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SFET RF,VHF, UHF, Amplitiers | |
2N5485 | MICRO-ELECTRONICS |
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N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS | |
2N5485 | CALOGIC |
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N-Channel JFET High Frequency Amplifier | |
2N5485 | VISHAY |
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N-Channel JFETs |