Datasheet > 2N5485

2N5485

更新时间： 2024-10-31 14:52:43

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
16页	560K
描述
.5V,4V,10mA,310mW Through-Hole JFET N Channel

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替代型号

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2N5485 数据手册

2N5484

2N5485

2N5486

www.centralsemi.com

The CENTRAL SEMICONDUCTOR 2N5484, 2N5485,

and 2N5486 are silicon N-Channel JFETs designed for

RF amplifier and mixer applications. These devices will

operate well in the VHF/UHF frequency range.

SILICON

N-CHANNEL JFET

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS: (T =25°C)

Drain-Gate Voltage

SYMBOL

UNITS

Gate-Source Voltage

Drain Current

°C

Continuous Gate Current

Power Dissipation

310

Operating and Storage Junction Temperature

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

2N5484

2N5485

MIN MAX

2N5486

MIN MAX

SYMBOL

TEST CONDITIONS

MIN MAX

UNITS

=20V

1.0

0.2

5.0

1.0

0.2

1.0

0.2

GSS

DSS

=20V, T =100°C

=15V

μA

1.0

4.0

8.0

I =1.0μA

GSS

=15V, I =10nA

0.3

3.0

6.0

5.0

2.0

1.0

100

0.5

4.0

7.0

5.0

2.0

1.0

2.0

6.0

8.0

5.0

2.0

1.0

GS(off)

|y |

=15V, V =0, f=1.0kHz

3.0

3.5

4.0

μS

=15V, V =0, f=1.0kHz

=15V, V =0, f=1.0MHz

iss

=15V, V =0, f=1.0MHz

oss

=15V, V =0, f=1.0MHz

rss

=15V, V =0, f=100MHz

e(yis)

e(yos)

e(yfs)

=15V, V =0, f=400MHz

1.0

=15V, V =0, f=100MHz

=15V, V =0, f=400MHz

100

=15V, V =0, f=100MHz

2.5

=15V, V =0, f=400MHz

3.0

3.5

R1 (2-May 2014)

12 3 4 5 6 7...16

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2N5485 替代型号

型号	品牌	替代类型	描述	数据表
2N5485-E3	VISHAY	功能相似	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-

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