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2N5485 PDF预览

2N5485

更新时间: 2024-11-30 14:52:43
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
16页 560K
描述
.5V,4V,10mA,310mW Through-Hole JFET N Channel

2N5485 数据手册

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2N5484  
2N5485  
2N5486  
www.centralsemi.com  
The CENTRAL SEMICONDUCTOR 2N5484, 2N5485,  
and 2N5486 are silicon N-Channel JFETs designed for  
RF amplifier and mixer applications. These devices will  
operate well in the VHF/UHF frequency range.  
SILICON  
N-CHANNEL JFET  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
Drain-Gate Voltage  
SYMBOL  
UNITS  
V
A
V
25  
DG  
GS  
Gate-Source Voltage  
V
25  
30  
V
Drain Current  
I
mA  
mA  
mW  
°C  
D
Continuous Gate Current  
Power Dissipation  
I
10  
G
P
310  
D
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
2N5484  
2N5485  
MIN MAX  
2N5486  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
UNITS  
nA  
I
I
I
V
V
V
=20V  
-
1.0  
0.2  
5.0  
-
-
1.0  
0.2  
10  
-
-
1.0  
0.2  
20  
-
GSS  
GSS  
DSS  
GS  
GS  
DS  
=20V, T =100°C  
A
=15V  
-
-
-
μA  
mA  
V
1.0  
4.0  
8.0  
BV  
I =1.0μA  
25  
25  
25  
GSS  
G
V
V
V
V
V
V
V
V
V
V
V
V
V
=15V, I =10nA  
D
0.3  
3.0  
6.0  
50  
5.0  
2.0  
1.0  
100  
-
0.5  
4.0  
7.0  
60  
5.0  
2.0  
1.0  
-
2.0  
6.0  
8.0  
75  
5.0  
2.0  
1.0  
-
V
GS(off)  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
|y |  
|y |  
=15V, V =0, f=1.0kHz  
3.0  
3.5  
4.0  
mS  
μS  
pF  
pF  
pF  
μS  
mS  
μS  
μS  
mS  
mS  
fs  
GS  
=15V, V =0, f=1.0kHz  
GS  
-
-
-
os  
C
C
C
R
R
R
R
R
R
=15V, V =0, f=1.0MHz  
-
-
-
iss  
GS  
=15V, V =0, f=1.0MHz  
GS  
-
-
-
oss  
=15V, V =0, f=1.0MHz  
-
-
-
rss  
GS  
=15V, V =0, f=100MHz  
GS  
-
-
-
e(yis)  
e(yis)  
e(yos)  
e(yos)  
e(yfs)  
e(yfs)  
=15V, V =0, f=400MHz  
-
-
1.0  
-
-
1.0  
-
GS  
=15V, V =0, f=100MHz  
GS  
-
-
75  
-
-
-
-
-
=15V, V =0, f=400MHz  
100  
-
100  
-
GS  
=15V, V =0, f=100MHz  
GS  
2.5  
-
-
-
-
=15V, V =0, f=400MHz  
-
3.0  
-
3.5  
-
GS  
R1 (2-May 2014)  

2N5485 替代型号

型号 品牌 替代类型 描述 数据表
2N5485-E3 VISHAY

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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-

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