Datasheet > 2N5457RL1

2N5457RL1

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
3页	137K
描述
25V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, CASE 29-11, 3 PIN

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2N5457RL1 数据手册

2N5457, 2N5458

2N5457 and 2N5458 are Preferred Devices

JFETs - General Purpose

N–Channel – Depletion

N–Channel Junction Field Effect Transistors, depletion mode (Type

A) designed for audio and switching applications.

http://onsemi.com

• N–Channel for Higher Gain

• Drain and Source Interchangeable

• High AC Input Impedance

1 DRAIN

• High DC Input Resistance

• Low Transfer and Input Capacitance

• Low Cross–Modulation and Intermodulation Distortion

• Unibloc Plastic Encapsulated Package

GATE

2 SOURCE

MAXIMUM RATINGS

TO–92

CASE 29

STYLE 5

Rating

Drain–Source Voltage

Drain–Gate Voltage

Symbol

Value

Unit

Vdc

MARKING DIAGRAMS

Reverse Gate–Source Voltage

Gate Current

–25

Vdc

GSR

mAdc

5457

YWW

5458

YWW

Total Device Dissipation

@ T = 25°C

310

Derate above 25°C

2.82

mW/°C

Operating Junction Temperature

135

°C

Storage Temperature Range

stg

–65 to +150

= Year

= Work Week

ORDERING INFORMATION

Device

2N5457

2N5458

Package

TO–92

Shipping

5000 Units/Box

TO–92

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

September, 2001 – Rev. 3

2N5638/D

12 3

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