Datasheet > 2N5415CSM4_11

2N5415CSM4_11

更新时间： 2022-09-16 13:33:30

品牌	Logo	应用领域
SEME-LAB		晶体晶体管局域网
页数	文件大小	规格书
3页	79K
描述
SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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2N5415CSM4_11 数据手册

SILICON PLANAR

EPITAXIAL PNP TRANSISTOR

2N5415CSM4

2N5416CSM4

•

Silicon Planar PNP Transistor

Hermetic Ceramic Surface Mounted Package.

Hi-Rel Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

2N5415

2N5416

-350V

-300V

-6V

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

-200V

-4V

CBO

CEO

EBO

Continuous Collector Current

Base Current

1.0A

0.5A

T = 25°C

Total Power Dissipation at

Junction Temperature Range

Storage Temperature Range

1.0W

175°C

-65 to +200°C

stg

THERMAL PROPERTIES (Each Device)

Symbols

Parameters

Max.

Units

Thermal Resistance, Junction To Ambient

150

°C/W

θJA

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 9226

Issue 2

Page 1 of 3

Website: http://www.semelab-tt.com

12 3

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